As per the latest report by IMARC Group, titled “GaN Power Device Market Report by Device Type (Power Device, RF Power Device), Voltage Range (<200 Volt, 200–600 Volt, >600 Volt), Application (Power Drives, Power Supply Systems, Radio Frequency Based Systems), End-Use Industry (Telecommunications, Automotive, Renewable Power Generation, Military, Aerospace and Defense, Consumer Electronics, and Others), and Region 2025-2033,” the global GaN power device market reached a value of USD 451.0 Million in 2024. A gallium nitride (GaN) power device refers to a high electron mobility transistor (HEMT) that controls the free-moving electrons in the wide bandgap of semiconductors to generate electrical energy. It has higher electric-field strength, lesser on-resistance and lower output capacitance than silicon metal-oxide-semiconductor field-effect transistors (MOSFET). In recent years, GaN power devices have gained traction as they improve efficiency, conduct more electrons and decrease switch node ringing.
Global GaN Power Device Market Trends:
The global GaN power device market is primarily driven by the increasing product applications across various end use industries. For instance, these devices are widely employed in lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). GaN power devices are also extensively used in manufacturing healthcare scanning equipment like miniaturized X-ray machines, sonograms, and magnetic resonance imaging (MRI) for diagnostic accuracy and patient comfort. Besides this, they find applications in radars to improve navigation, facilitate real-time air traffic control and prevent collisions. Additionally, the implementation of stringent government policies regarding greenhouse gas (GHG) emissions is accelerating the sales of EVs and HEVs and encouraging the adoption of energy-efficient devices. Furthermore, the rapid penetration of the internet of things (IoT) and 5G technology have catalyzed the market growth. Looking forward, the market value is projected to reach USD 4,706.2 Million by 2033, expanding at a CAGR of 28.28% during 2025-2033.
Market Summary:
Report Features | Details |
---|---|
Base Year of the Analysis | 2024 |
Historical Period | 2019-2024 |
Forecast Period | 2025-2033 |
Units | Million USD |
Segment Coverage | Device Type, Voltage Range, Application, End-Use Industry, Region |
Region Covered | Asia Pacific, Europe, North America, Latin America, Middle East and Africa |
Countries Covered | United States, Canada, Germany, France, United Kingdom, Italy, Spain, Russia, China, Japan, India, South Korea, Australia, Indonesia, Brazil, Mexico |
Companies Covered | Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation and Wolfspeed Inc. (Cree Inc.) |
Customization Scope | 10% Free Customization |
Post-Sale Analyst Support | 10-12 Weeks |
Delivery Format | PDF and Excel through Email (We can also provide the editable version of the report in PPT/Word format on special request) |
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